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45 nm process
Per the International Technology Roadmap for Semiconductors, the 45 nm process is a MOSFET technology node referring to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame.
Matsushita and Intel started mass-producing 45 nm chips in late 2007, and AMD started production of 45 nm chips in late 2008, while IBM, Infineon, Samsung, and Chartered Semiconductor have already completed a common 45 nm process platform. At the end of 2008, SMIC was the first China-based semiconductor company to move to 45 nm, having licensed the bulk 45 nm process from IBM. In 2008, TSMC moved on to a 40 nm process.
Many critical feature sizes are smaller than the wavelength of light used for lithography (i.e., 193 nm and 248 nm). A variety of techniques, such as larger lenses, are used to make sub-wavelength features. Double patterning has also been introduced to assist in shrinking distances between features, especially if dry lithography is used. It is expected that more layers will be patterned with 193 nm wavelength at the 45 nm node. Moving previously loose layers (such as Metal 4 and Metal 5) from 248 nm to 193 nm wavelength is expected to continue, which will likely further drive costs upward, due to difficulties with 193 nm photoresists.
Chipmakers have initially voiced concerns about introducing new high-κ materials into the gate stack, for the purpose of reducing leakage current density. As of 2007, however, both IBM and Intel have announced that they have high-κ dielectric and metal gate solutions, which Intel considers to be a fundamental change in transistor design. NEC has also put high-κ materials into production.
The successors to 45 nm technology are 32 nm, 22 nm, and then 14 nm technologies.
Matsushita Electric Industrial Co. started mass production of system-on-a-chip (SoC) ICs for digital consumer equipment based on 45 nm process technology in June 2007.
Intel shipped its first 45 nm processor, the Xeon 5400 series, in November 2007.
Many details about Penryn appeared at the April 2007 Intel Developer Forum. Its successor is called Nehalem. Important advances include the addition of new instructions (including SSE4, also known as Penryn New Instructions) and new fabrication materials (most significantly a hafnium-based dielectric). Intel's 45nm process has a transistor density of 3.33 million transistors per square millimeter (MTr/mm2).
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45 nm process
Per the International Technology Roadmap for Semiconductors, the 45 nm process is a MOSFET technology node referring to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame.
Matsushita and Intel started mass-producing 45 nm chips in late 2007, and AMD started production of 45 nm chips in late 2008, while IBM, Infineon, Samsung, and Chartered Semiconductor have already completed a common 45 nm process platform. At the end of 2008, SMIC was the first China-based semiconductor company to move to 45 nm, having licensed the bulk 45 nm process from IBM. In 2008, TSMC moved on to a 40 nm process.
Many critical feature sizes are smaller than the wavelength of light used for lithography (i.e., 193 nm and 248 nm). A variety of techniques, such as larger lenses, are used to make sub-wavelength features. Double patterning has also been introduced to assist in shrinking distances between features, especially if dry lithography is used. It is expected that more layers will be patterned with 193 nm wavelength at the 45 nm node. Moving previously loose layers (such as Metal 4 and Metal 5) from 248 nm to 193 nm wavelength is expected to continue, which will likely further drive costs upward, due to difficulties with 193 nm photoresists.
Chipmakers have initially voiced concerns about introducing new high-κ materials into the gate stack, for the purpose of reducing leakage current density. As of 2007, however, both IBM and Intel have announced that they have high-κ dielectric and metal gate solutions, which Intel considers to be a fundamental change in transistor design. NEC has also put high-κ materials into production.
The successors to 45 nm technology are 32 nm, 22 nm, and then 14 nm technologies.
Matsushita Electric Industrial Co. started mass production of system-on-a-chip (SoC) ICs for digital consumer equipment based on 45 nm process technology in June 2007.
Intel shipped its first 45 nm processor, the Xeon 5400 series, in November 2007.
Many details about Penryn appeared at the April 2007 Intel Developer Forum. Its successor is called Nehalem. Important advances include the addition of new instructions (including SSE4, also known as Penryn New Instructions) and new fabrication materials (most significantly a hafnium-based dielectric). Intel's 45nm process has a transistor density of 3.33 million transistors per square millimeter (MTr/mm2).