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Metal–semiconductor junction
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Metal–semiconductor junction
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest type of practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
Metal–semiconductor junctions are crucial to the operation of all semiconductor devices. Usually, an ohmic contact is desired so that electrical charge can be conducted easily between the active region of a transistor and the external circuitry. Occasionally, however, a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal–semiconductor field effect transistors.
Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, ΦB, of the junction. For a sufficiently large Schottky barrier height, that is, ΦB is significantly higher than the thermal energy kT, the semiconductor is depleted near the metal and behaves as a Schottky barrier. This is typically between 0.4 eV and 0.7 eV for a material like silicon. For lower Schottky barrier heights, the semiconductor is not depleted and instead forms an ohmic contact to the metal.
The Schottky barrier height is defined differently for n-type and p-type semiconductors (being measured from the conduction band edge and valence band edge, respectively). The alignment of the semiconductor's bands near the junction is typically independent of the semiconductor's doping level, so the n-type and p-type Schottky barrier heights are ideally related to each other by:
where Eg is the semiconductor's band gap.
In practice, the Schottky barrier height is not precisely constant across the interface, and varies over the interfacial surface.
The Schottky–Mott rule of Schottky barrier formation, named for Walter H. Schottky and Nevill Mott, predicts the Schottky barrier height based on the vacuum work function of the metal relative to the vacuum electron affinity (or vacuum ionization energy) of the semiconductor:
This model is derived based on the thought experiment of bringing together the two materials in vacuum, and is closely related in logic to Anderson's rule for semiconductor-semiconductor junctions. Different semiconductors respect the Schottky–Mott rule to varying degrees.
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Metal–semiconductor junction
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest type of practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
Metal–semiconductor junctions are crucial to the operation of all semiconductor devices. Usually, an ohmic contact is desired so that electrical charge can be conducted easily between the active region of a transistor and the external circuitry. Occasionally, however, a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal–semiconductor field effect transistors.
Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, ΦB, of the junction. For a sufficiently large Schottky barrier height, that is, ΦB is significantly higher than the thermal energy kT, the semiconductor is depleted near the metal and behaves as a Schottky barrier. This is typically between 0.4 eV and 0.7 eV for a material like silicon. For lower Schottky barrier heights, the semiconductor is not depleted and instead forms an ohmic contact to the metal.
The Schottky barrier height is defined differently for n-type and p-type semiconductors (being measured from the conduction band edge and valence band edge, respectively). The alignment of the semiconductor's bands near the junction is typically independent of the semiconductor's doping level, so the n-type and p-type Schottky barrier heights are ideally related to each other by:
where Eg is the semiconductor's band gap.
In practice, the Schottky barrier height is not precisely constant across the interface, and varies over the interfacial surface.
The Schottky–Mott rule of Schottky barrier formation, named for Walter H. Schottky and Nevill Mott, predicts the Schottky barrier height based on the vacuum work function of the metal relative to the vacuum electron affinity (or vacuum ionization energy) of the semiconductor:
This model is derived based on the thought experiment of bringing together the two materials in vacuum, and is closely related in logic to Anderson's rule for semiconductor-semiconductor junctions. Different semiconductors respect the Schottky–Mott rule to varying degrees.