Magnetoresistive RAM

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.

Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction (MTJ) and is the simplest structure for an MRAM bit. A memory device is built from a grid of such "cells".

The simplest method of reading is accomplished by measuring the electrical resistance of the cell. A particular cell is (typically) selected by powering an associated transistor that switches current from a supply line through the cell to ground. Because of tunnel magnetoresistance, the electrical resistance of the cell changes with the relative orientation of the magnetization in the two plates. By measuring the resulting current, the resistance inside any particular cell can be determined, and from this the magnetization polarity of the writable plate. Typically if the two plates have the same magnetization alignment (low resistance state) this is considered to mean "1", while if the alignment is antiparallel the resistance will be higher (high resistance state) and this means "0".

Data is written to the cells using a variety of means. In the simplest "classic" design, each cell lies between a pair of write lines arranged at right angles to each other, parallel to the cell, one above and one below the cell. When current is passed through them, an induced magnetic field is created at the junction, which the writable plate picks up. This pattern of operation is similar to magnetic-core memory, a system commonly used in the 1960s.

However, due to process and material variations, an array of memory cells has a distribution of switching fields with a deviation σ. Therefore, to program all the bits in a large array with the same current, the applied field needs to be larger than the mean "selected" switching field by greater than 6σ. In addition,the applied field must be kept below a maximum value. Thus, this "conventional" MRAM must keep these two distributions well-separated. As a result, there is a narrow operating window for programming fields; and only inside this window, can all the bits be programmed without errors or disturbs. In 2005, a "Savtchenko switching" relying on the unique behavior of a synthetic antiferromagnet (SAF) free layer is applied to solve this problem. The SAF layer is formed from two ferromagnetic layers separated by a nonmagnetic coupling spacer layer. For a synthetic antiferromagnet having some net anisotropy Hk in each layer, there exists a critical spin flop field Hsw at which the two antiparallel layer magnetizations will rotate (flop) to be orthogonal to the applied field H with each layer scissoring slightly in the direction of H. Therefore, if only a single line current is applied (half-selected bits), the 45° field angle cannot switch the state. Below the toggling transition, there are no disturbs all the way up to the highest fields.

This approach still requires a fairly substantial current to generate the field, however, which makes it less interesting for low-power uses, one of MRAM's primary disadvantages. Additionally, as the device is scaled down in size, there comes a time when the induced field overlaps adjacent cells over a small area, leading to potential false writes. This problem, the half-select (or write disturb) problem, appears to set a fairly large minimal size for this type of cell. One experimental solution to this problem was to use circular domains written and read using the giant magnetoresistive effect, but it appears that this line of research is no longer active.

A newer technique, spin-transfer torque (STT) or spin-transfer switching, uses spin-aligned ("polarized") electrons to directly torque the domains. Specifically, if the electrons flowing into a layer have to change their spin, this will develop a torque that will be transferred to the nearby layer. This lowers the amount of current needed to write the cells, making it about the same as the read process.^{[citation needed]} There are concerns that the "classic" type of MRAM cell will have difficulty at high densities because of the amount of current needed during writes, a problem that STT avoids. For this reason, the STT proponents expect the technique to be used for devices of 65 nm and smaller. The downside is the need to maintain the spin coherence. Overall, the STT requires much less write current than conventional or toggle MRAM. Research in this field indicates that STT current can be reduced up to 50 times by using a new composite structure. However, higher-speed operation still requires higher current.

Other potential arrangements include "vertical transport MRAM" (VMRAM), which uses current through a vertical column to change magnetic orientation, a geometric arrangement that reduces the write disturb problem and so can be used at higher density.