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Step recovery diode AI simulator
(@Step recovery diode_simulator)
Hub AI
Step recovery diode AI simulator
(@Step recovery diode_simulator)
Step recovery diode
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier.
When diodes switch from forward conduction to reverse cut-off, a reverse current flows briefly as stored charge is removed. It is the abruptness with which this reverse current ceases which characterises the step recovery diode.
The first published paper on the SRD is (Boff, Moll & Shen 1960): the authors start the brief survey stating that "the recovery characteristics of certain types of pn-junction diodes exhibit a discontinuity which may be used to advantage for the generation of harmonics or for the production of millimicrosecond pulses". They also refer that they first observed this phenomenon in February, 1959
The main phenomenon used in SRDs is the storage of electric charge during forward conduction, which is present in all semiconductor junction diodes and is due to finite lifetime of minority carriers in semiconductors. Assume that the SRD is forward biased and in steady state i.e. the anode bias current does not change with time: since charge transport in a junction diode is mainly due to diffusion, i.e. to a non constant spatial charge carrier density caused by bias voltage, a charge Qs is stored in the device. This stored charge depends on
Quantitatively, if the steady state of forward conduction lasts for a time much greater than τ, the stored charge has the following approximate expression
Now suppose that the voltage bias abruptly changes, switching from its stationary positive value to a higher magnitude constant negative value: then, since a certain amount of charge has been stored during forward conduction, diode resistance is still low (i.e. the anode-to-cathode voltage VAK has nearly the same forward conduction value). Anode current does not cease but reverses its polarity (i.e. the direction of its flow) and stored charge Qs starts to flow out of the device at an almost constant rate IR. All the stored charge is thus removed in a certain amount of time: this time is the storage time tS and its approximate expression is
When all stored charge has been removed, diode resistance suddenly changes, rising to its cut-off value at reverse bias within a time tTr, the transition time: this behavior can be used to produce pulses with rise time equal to this time.
The drift step recovery diode (DSRD) was invented by Russian scientists in 1981 (Grekhov et al., 1981). The principle of the DSRD operation is similar to the SRD, with one essential difference - the forward pumping current should be pulsed, not continuous, because drift diodes function with slow carriers.
Step recovery diode
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier.
When diodes switch from forward conduction to reverse cut-off, a reverse current flows briefly as stored charge is removed. It is the abruptness with which this reverse current ceases which characterises the step recovery diode.
The first published paper on the SRD is (Boff, Moll & Shen 1960): the authors start the brief survey stating that "the recovery characteristics of certain types of pn-junction diodes exhibit a discontinuity which may be used to advantage for the generation of harmonics or for the production of millimicrosecond pulses". They also refer that they first observed this phenomenon in February, 1959
The main phenomenon used in SRDs is the storage of electric charge during forward conduction, which is present in all semiconductor junction diodes and is due to finite lifetime of minority carriers in semiconductors. Assume that the SRD is forward biased and in steady state i.e. the anode bias current does not change with time: since charge transport in a junction diode is mainly due to diffusion, i.e. to a non constant spatial charge carrier density caused by bias voltage, a charge Qs is stored in the device. This stored charge depends on
Quantitatively, if the steady state of forward conduction lasts for a time much greater than τ, the stored charge has the following approximate expression
Now suppose that the voltage bias abruptly changes, switching from its stationary positive value to a higher magnitude constant negative value: then, since a certain amount of charge has been stored during forward conduction, diode resistance is still low (i.e. the anode-to-cathode voltage VAK has nearly the same forward conduction value). Anode current does not cease but reverses its polarity (i.e. the direction of its flow) and stored charge Qs starts to flow out of the device at an almost constant rate IR. All the stored charge is thus removed in a certain amount of time: this time is the storage time tS and its approximate expression is
When all stored charge has been removed, diode resistance suddenly changes, rising to its cut-off value at reverse bias within a time tTr, the transition time: this behavior can be used to produce pulses with rise time equal to this time.
The drift step recovery diode (DSRD) was invented by Russian scientists in 1981 (Grekhov et al., 1981). The principle of the DSRD operation is similar to the SRD, with one essential difference - the forward pumping current should be pulsed, not continuous, because drift diodes function with slow carriers.
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