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Chemical vapor deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics.
The term chemical vapour deposition was coined in 1960 by John M. Blocher, Jr. who intended to differentiate chemical from physical vapour deposition (PVD).
CVD is practiced in a variety of formats. These processes generally differ in the means by which chemical reactions are initiated.
Most modern CVD is either LPCVD or UHVCVD.
CVD is commonly used to deposit conformal films and augment substrate surfaces in ways that more traditional surface modification techniques are not capable of. CVD is extremely useful in the process of atomic layer deposition at depositing extremely thin layers of material. A variety of applications for such films exist. Gallium arsenide is used in some integrated circuits (ICs) and photovoltaic devices. Amorphous polysilicon is used in photovoltaic devices. Certain carbides and nitrides confer wear-resistance. Polymerization by CVD, perhaps the most versatile of all applications, allows for super-thin coatings which possess some very desirable qualities, such as lubricity, hydrophobicity and weather-resistance to name a few. The CVD of metal-organic frameworks, a class of crystalline nanoporous materials, has recently been demonstrated. Recently scaled up as an integrated cleanroom process depositing large-area substrates, the applications for these films are anticipated in gas sensing and low-κ dielectrics. CVD techniques are advantageous for membrane coatings as well, such as those in desalination or water treatment, as these coatings can be sufficiently uniform (conformal) and thin that they do not clog membrane pores.
Polycrystalline silicon is deposited from trichlorosilane (SiHCl3) or silane (SiH4), using the following reactions:
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Chemical vapor deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics.
The term chemical vapour deposition was coined in 1960 by John M. Blocher, Jr. who intended to differentiate chemical from physical vapour deposition (PVD).
CVD is practiced in a variety of formats. These processes generally differ in the means by which chemical reactions are initiated.
Most modern CVD is either LPCVD or UHVCVD.
CVD is commonly used to deposit conformal films and augment substrate surfaces in ways that more traditional surface modification techniques are not capable of. CVD is extremely useful in the process of atomic layer deposition at depositing extremely thin layers of material. A variety of applications for such films exist. Gallium arsenide is used in some integrated circuits (ICs) and photovoltaic devices. Amorphous polysilicon is used in photovoltaic devices. Certain carbides and nitrides confer wear-resistance. Polymerization by CVD, perhaps the most versatile of all applications, allows for super-thin coatings which possess some very desirable qualities, such as lubricity, hydrophobicity and weather-resistance to name a few. The CVD of metal-organic frameworks, a class of crystalline nanoporous materials, has recently been demonstrated. Recently scaled up as an integrated cleanroom process depositing large-area substrates, the applications for these films are anticipated in gas sensing and low-κ dielectrics. CVD techniques are advantageous for membrane coatings as well, such as those in desalination or water treatment, as these coatings can be sufficiently uniform (conformal) and thin that they do not clog membrane pores.
Polycrystalline silicon is deposited from trichlorosilane (SiHCl3) or silane (SiH4), using the following reactions: