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Electron-beam lithography
Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution but low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.
Electron-beam lithography systems used in commercial applications are dedicated e-beam writing systems that are very expensive (> US$1M). For research applications, it is very common to convert an electron microscope into an electron-beam lithography system using relatively low cost accessories (< US$100K). Such converted systems have produced linewidths of ~20 nm since at least 1990, while current dedicated systems have produced linewidths on the order of 10 nm or smaller.
Electron-beam lithography systems can be classified according to both beam shape and beam deflection strategy. Older systems used Gaussian-shaped beams that scanned these beams in a raster fashion. Newer systems use shaped beams that can be deflected to various positions in the writing field (also known as "vector scan").
Lower-resolution systems can use thermionic sources (cathode), which are usually formed from lanthanum hexaboride. However, systems with higher-resolution requirements need to use field electron emission sources, such as heated W/ZrO2 for lower energy spread and enhanced brightness. Thermal field emission sources are preferred over cold emission sources, in spite of the former's slightly larger beam size, because they offer better stability over typical writing times of several hours.
Both electrostatic and magnetic lenses may be used. However, electrostatic lenses have more aberrations and so are not used for fine focusing. There is currently[when?] no mechanism to make achromatic electron-beam lenses, so extremely narrow dispersions of the electron-beam energy are needed for finest focusing.[citation needed][needs update]
Typically, for very small beam deflections, electrostatic deflection "lenses" are used; larger beam deflections require electromagnetic scanning. Because of the inaccuracy and because of the finite number of steps in the exposure grid, the writing field is of the order of 100 micrometre – 1 mm. Larger patterns require stage moves. An accurate stage is critical for stitching (tiling writing fields exactly against each other) and pattern overlay (aligning a pattern to a previously made one).
The minimum time to expose a given area for a given dose (measured in coulombs/cm2) is given by the following formula:
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Electron-beam lithography
Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution but low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.
Electron-beam lithography systems used in commercial applications are dedicated e-beam writing systems that are very expensive (> US$1M). For research applications, it is very common to convert an electron microscope into an electron-beam lithography system using relatively low cost accessories (< US$100K). Such converted systems have produced linewidths of ~20 nm since at least 1990, while current dedicated systems have produced linewidths on the order of 10 nm or smaller.
Electron-beam lithography systems can be classified according to both beam shape and beam deflection strategy. Older systems used Gaussian-shaped beams that scanned these beams in a raster fashion. Newer systems use shaped beams that can be deflected to various positions in the writing field (also known as "vector scan").
Lower-resolution systems can use thermionic sources (cathode), which are usually formed from lanthanum hexaboride. However, systems with higher-resolution requirements need to use field electron emission sources, such as heated W/ZrO2 for lower energy spread and enhanced brightness. Thermal field emission sources are preferred over cold emission sources, in spite of the former's slightly larger beam size, because they offer better stability over typical writing times of several hours.
Both electrostatic and magnetic lenses may be used. However, electrostatic lenses have more aberrations and so are not used for fine focusing. There is currently[when?] no mechanism to make achromatic electron-beam lenses, so extremely narrow dispersions of the electron-beam energy are needed for finest focusing.[citation needed][needs update]
Typically, for very small beam deflections, electrostatic deflection "lenses" are used; larger beam deflections require electromagnetic scanning. Because of the inaccuracy and because of the finite number of steps in the exposure grid, the writing field is of the order of 100 micrometre – 1 mm. Larger patterns require stage moves. An accurate stage is critical for stitching (tiling writing fields exactly against each other) and pattern overlay (aligning a pattern to a previously made one).
The minimum time to expose a given area for a given dose (measured in coulombs/cm2) is given by the following formula: