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Memory cell (computing)
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Memory cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today[as of?], the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM.
The SRAM (static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed. A second type, DRAM (dynamic RAM), is based on MOS capacitors. Charging and discharging a capacitor can store either a '1' or a '0' in the cell. However, since the charge in the capacitor slowly dissipates, it must be refreshed periodically. Due to this refresh process, DRAM consumes more power, but it can achieve higher storage densities.
Most non-volatile memory (NVM), on the other hand, is based on floating-gate memory cell architectures. Non-volatile memory technologies such as EPROM, EEPROM, and flash memory utilize floating-gate memory cells, which rely on floating-gate MOSFET transistors.
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices. It can also be built from magnetic material such as ferrite cores or magnetic bubbles. Regardless of the implementation technology used, the purpose of the binary memory cell is always the same. It stores one bit of binary information that can be accessed by reading the cell and it must be set to store a 1 and reset to store a 0.
Logic circuits without memory cells are called combinational, meaning the output depends only on the present input.
But memory is a key element of digital systems. In computers, it allows to store both programs and data and memory cells are also used for temporary storage of the output of combinational circuits to be used later by digital systems.
Logic circuits that use memory cells are called sequential circuits, meaning the output depends not only on the present input, but also on the history of past inputs. This dependence on the history of past inputs makes these circuits stateful and it is the memory cells that store this state. These circuits require a timing generator or clock for their operation.
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Memory cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today[as of?], the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM.
The SRAM (static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed. A second type, DRAM (dynamic RAM), is based on MOS capacitors. Charging and discharging a capacitor can store either a '1' or a '0' in the cell. However, since the charge in the capacitor slowly dissipates, it must be refreshed periodically. Due to this refresh process, DRAM consumes more power, but it can achieve higher storage densities.
Most non-volatile memory (NVM), on the other hand, is based on floating-gate memory cell architectures. Non-volatile memory technologies such as EPROM, EEPROM, and flash memory utilize floating-gate memory cells, which rely on floating-gate MOSFET transistors.
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices. It can also be built from magnetic material such as ferrite cores or magnetic bubbles. Regardless of the implementation technology used, the purpose of the binary memory cell is always the same. It stores one bit of binary information that can be accessed by reading the cell and it must be set to store a 1 and reset to store a 0.
Logic circuits without memory cells are called combinational, meaning the output depends only on the present input.
But memory is a key element of digital systems. In computers, it allows to store both programs and data and memory cells are also used for temporary storage of the output of combinational circuits to be used later by digital systems.
Logic circuits that use memory cells are called sequential circuits, meaning the output depends not only on the present input, but also on the history of past inputs. This dependence on the history of past inputs makes these circuits stateful and it is the memory cells that store this state. These circuits require a timing generator or clock for their operation.
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