Porous silicon (abbreviated as "PS" or "pSi") is a form of the chemical element silicon that has introduced nanopores in its microstructure, rendering a large surface to volume ratio in the order of 500 m²/cm³.

Porous silicon was discovered by accident in 1956 by Arthur Uhlir Jr. and Ingeborg Uhlir at the Bell Labs in the U.S. At the time, the Uhlirs were in the process of developing a technique for polishing and shaping the surfaces of silicon and germanium. However, it was found that under several conditions a crude product in the form of thick black, red or brown film were formed on the surface of the material. At the time, the findings were not taken further and were only mentioned in Bell Lab's technical notes.

Despite the discovery of porous silicon in the 1950s, the scientific community was not interested in porous silicon until the late 1980s. At the time, Leigh Canham – while working at the Defence Research Agency in England – reasoned that the porous silicon may display quantum confinement effects. The intuition was followed by successful experimental results published in 1990. In the published experiment, it was revealed that silicon wafers can emit light if subjected to electrochemical and chemical dissolution.

The published result stimulated the interest of the scientific community in its non-linear optical and electrical properties. The growing interest was evidenced in the number of published work concerning the properties and potential applications of porous silicon. In an article published in 2000, it was found that the number of published work grew exponentially in between 1991 and 1995.

In 2001, a team of scientists at the Technical University of Munich inadvertently discovered that hydrogenated porous silicon reacts explosively with oxygen at cryogenic temperatures, releasing several times as much energy as an equivalent amount of TNT, at a much greater speed. (An abstract of the study can be found below.) Explosion occurs because the oxygen, which is in a liquid state at the necessary temperatures, is able to oxidize through the porous molecular structure of the silicon extremely rapidly, causing a very quick and efficient detonation. Although hydrogenated porous silicon would probably not be effective as a weapon, due to its functioning only at low temperatures, other uses are being explored for its explosive properties, such as providing thrust for satellites.

Anodization and stain-etching are the two most common methods used for fabrication of porous silicon; however, there are almost twenty other methods to fabricate this material.^{[citation needed]} Drying and surface modification might be needed afterwards. If anodization in an aqueous solution is used to form microporous silicon, the material is commonly treated in ethanol immediately after fabrication, to avoid damage to the structure that results due to the stresses of the capillary effect of the aqueous solution.

One method of introducing pores in silicon is through the use of an anodization cell. A possible anodization cell is made of Teflon and employs a platinum cathode and a crystalline Si wafer anode immersed in hydrogen fluoride (HF) electrolyte. Recently, inert diamond cathodes were used to avoid metallic impurities in the electrolyte and inert diamond anodes form an improved electrical back plate contact to the silicon wafers. Corrosion of the anode is produced by running electric current through the cell. It is noted that etching with constant DC is usually implemented to ensure steady tip-concentration of HF resulting in a more homogeneous porous layer, while pulsed current is more appropriate for the formation of thick PS layers with thickness greater than 50 μm. Pore direction is governed by crystal orientation. In (100)-cut Si the pores are oriented perpendicular to the wafer's surface.

It was noted by Halimaoui that hydrogen evolution occurs during the formation of porous silicon.