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PlayStation 3 technical specifications
The PlayStation 3 technical specifications describe the various components of the PlayStation 3 (PS3) video game console.
The PlayStation 3 is powered by the Cell Broadband Engine, a 64-bit CPU co-developed by Sony, Toshiba and IBM. It includes a 3.2 GHz PowerPC-based Power Processing Element (PPE) and seven Synergistic Processing Elements (SPEs). To improve manufacturing yield, the processor is initially fabricated with eight SPEs. After production, each chip is tested, and if a defect is found in one SPE, it is disabled using laser trimming. This approach minimizes waste by utilizing processors that would otherwise be discarded. Even in chips without defects, one SPE is intentionally disabled to ensure consistency across units. Of the seven operational SPEs, six are available for developers to use in games and applications, while the seventh is reserved for the console's operating system.
The Cell processor achieves a theoretical maximum of 204.8 GFLOPS in single precision floating point operations and up to 15 GFLOPS double precision.
The PS3 has 256 MB Rambus XDR DRAM, clocked at CPU die speed. The PPE has 64 KB L1 cache and 512 KB L2 cache, while the SPEs have 2 MB local memory (256 KB per SPE), connected by the Element Interconnect Bus (EIB) with up to 307.2 Gbit/s bandwidth.
The Cell processor was initially produced on a 90 nm process. It was shrunk to 65 nm in 2007, and to 45 nm in 2009.
Graphics processing for PlayStation 3 is managed by the RSX Reality Synthesizer, developed by Nvidia and paired with 256 MB of GDDR3 video memory. The RSX graphics processor can output resolutions ranging from standard-definition (480i/576i) up to high-definition (1080p).
The GPU is clocked at 500 MHz and makes use of 256 MB GDDR3 RAM clocked at 650 MHz with an effective transmission rate of 1.3 GHz. The RSX has a floating-point performance of 192 GFLOPS.
The RSX was initially fabricated on a 90 nm process. It received a node shrink to 65 nm in 2008, to 40 nm in 2010, and to 28 nm in 2013.
PlayStation 3 technical specifications
The PlayStation 3 technical specifications describe the various components of the PlayStation 3 (PS3) video game console.
The PlayStation 3 is powered by the Cell Broadband Engine, a 64-bit CPU co-developed by Sony, Toshiba and IBM. It includes a 3.2 GHz PowerPC-based Power Processing Element (PPE) and seven Synergistic Processing Elements (SPEs). To improve manufacturing yield, the processor is initially fabricated with eight SPEs. After production, each chip is tested, and if a defect is found in one SPE, it is disabled using laser trimming. This approach minimizes waste by utilizing processors that would otherwise be discarded. Even in chips without defects, one SPE is intentionally disabled to ensure consistency across units. Of the seven operational SPEs, six are available for developers to use in games and applications, while the seventh is reserved for the console's operating system.
The Cell processor achieves a theoretical maximum of 204.8 GFLOPS in single precision floating point operations and up to 15 GFLOPS double precision.
The PS3 has 256 MB Rambus XDR DRAM, clocked at CPU die speed. The PPE has 64 KB L1 cache and 512 KB L2 cache, while the SPEs have 2 MB local memory (256 KB per SPE), connected by the Element Interconnect Bus (EIB) with up to 307.2 Gbit/s bandwidth.
The Cell processor was initially produced on a 90 nm process. It was shrunk to 65 nm in 2007, and to 45 nm in 2009.
Graphics processing for PlayStation 3 is managed by the RSX Reality Synthesizer, developed by Nvidia and paired with 256 MB of GDDR3 video memory. The RSX graphics processor can output resolutions ranging from standard-definition (480i/576i) up to high-definition (1080p).
The GPU is clocked at 500 MHz and makes use of 256 MB GDDR3 RAM clocked at 650 MHz with an effective transmission rate of 1.3 GHz. The RSX has a floating-point performance of 192 GFLOPS.
The RSX was initially fabricated on a 90 nm process. It received a node shrink to 65 nm in 2008, to 40 nm in 2010, and to 28 nm in 2013.
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