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Constant-current diode
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A constant-current diode is an electronic device that limits current to a maximal specified value for the device. It is known as a current-limiting diode (CLD) or current-regulating diode (CRD).

It consists of an n-channel JFET with the gate shorted to the source, which functions like a two-terminal current limiter (analogous to a voltage-limiting Zener diode). It allows a current through it to rise to a certain value, but not higher.
Note that some devices are unidirectional and voltage across the device must have only one polarity for it to operate as a CLD, whereas other devices are bidirectional and can operate properly with either polarity.
Wide-bandgap materials such as silicon carbide have been used in production devices to enable high-voltage applications in the kilovolt range.[1]
References
[edit]- ^ "CALY Technologies SiC CLD devices". CALY Technologies. Retrieved 26 April 2020.
External links
[edit]- IEEE 315 symbol for current-regulating diode
- Advantages of Constant Current Regulators (CCR) in Driving LEDs on YouTube
- Diode
- CLD diode datasheet, MCC
- CRD diode datasheet, Semitec
- J500 diode datasheet, Linear Systems / Siliconix / Vishay
- 1N5283 to 1N5314 diode datasheet, Central Semiconductor
- JFET
- 2N5457/8/9 & MMBF5457/8/9 JFET datasheet, ON Semiconductor (Former Fairchild)
Constant-current diode
View on GrokipediaDefinition and overview
Definition
A constant-current diode, also known as a current-limiting diode (CLD) or current-regulating diode (CRD), is a two-terminal electronic device designed to limit current to a maximum specified value, thereby functioning as a simple current source or limiter across a broad range of applied voltages.[5][6] It maintains this regulation by adjusting its internal resistance dynamically, ensuring stable current delivery independent of voltage fluctuations or load variations within its operating range.[7] This device operates analogously to a Zener diode, which stabilizes voltage at a fixed level, but instead prioritizes current constancy over voltage, making it ideal for applications requiring precise current control without additional circuitry.[8] For unidirectional variants, current regulation occurs in forward bias, where the device maintains constant current with a low voltage drop, while in reverse bias, it blocks current like a conventional diode.[9] A constant-current diode is often implemented using a junction field-effect transistor (JFET) structure, where the gate and source are interconnected to achieve the limiting effect.[6] The schematic symbol for a constant-current diode resembles a standard diode but incorporates elements to denote its regulatory function, typically featuring a diode body with an arrow indicating the direction of current flow toward the cathode bar.[6] This representation aligns with standards such as IEEE Std 315 for current-regulating diodes.[5]Nomenclature and symbols
The constant-current diode, abbreviated as CCD, is alternatively known as a current-limiting diode (CLD) or current-regulating diode (CRD).[2][10] These terms emphasize its role in maintaining a stable current flow, with CLD and CRD commonly used in manufacturer datasheets and technical literature.[11] In historical or discrete-component contexts, the device is sometimes referred to as a diode-connected transistor, reflecting configurations where a junction field-effect transistor (JFET) has its gate shorted to the source to mimic diode behavior.[12] The schematic symbol for a constant-current diode is a two-terminal device, depicted with an anode and cathode marking, but distinguished from a standard PN-junction diode by replacing the triangular anode with a circular one to indicate its current-regulating function.[13][9] The cathode is represented by a straight vertical bar, similar to conventional diodes, ensuring clear polarity in unidirectional models. Bidirectional variants, which support current limiting in either direction, employ a symmetric symbol lacking distinct anode and cathode labels.[14][15]Operating principle
JFET basis
The constant-current diode, also known as a current-regulating diode (CRD) or current-limiting diode (CLD), is fundamentally based on an n-channel junction field-effect transistor (JFET) where the gate is shorted to the source, forming a two-terminal device with the drain serving as the anode and the source as the cathode.[1][2] In a standard n-channel JFET, current flows through a conductive channel between the drain and source terminals, controlled by the depletion region formed at the reverse-biased p-n junction between the gate and the n-type channel material. Applying a gate-to-source voltage widens this depletion region, progressively narrowing the channel until it reaches pinch-off, at which point the channel is fully depleted and current saturation occurs, limiting further increase in drain current.[16] By shorting the gate to the source, the gate-to-source voltage is fixed at zero, establishing a constant pinch-off voltage determined by the JFET's inherent characteristics, which allows the device to operate as a two-terminal current regulator without requiring an external bias.[2][1] This configuration imparts a unidirectional nature to the device, as the JFET's polarity ensures conduction primarily in the forward direction from drain to source, akin to a diode, while reverse bias leads to negligible current flow.[2]Current regulation mechanism
The constant-current diode operates in the saturation region of the underlying JFET, where the drain current becomes largely independent of the drain-source voltage once exceeds a minimum threshold value.[17][18] In this regime, the JFET's conductive channel is pinched off at the drain end, stabilizing the current flow despite variations in .[17] The regulation mechanism relies on the interplay between the depletion regions at the gate-channel junctions. As increases, the depletion region near the drain widens, further constricting the channel and limiting additional current increase. However, with the gate-source voltage fixed at V—achieved by shorting the gate to the source—the width of the depletion region at the gate-channel junction remains constant (modulo the built-in potential), maintaining a fixed channel resistance and preventing significant changes in overall conductivity.[18][17] For effective current regulation, must exceed the magnitude of the JFET's pinch-off voltage , typically resulting in a minimum of 1-5 V depending on the device.[19] Below this threshold, the device enters the linear region, where varies more noticeably with . Temperature effects can impact regulation stability, as rising temperatures reduce carrier mobility in the channel, potentially causing a slight decrease in unless the device is biased near its zero-temperature-coefficient point.[19][4]Construction and types
Standard construction
The standard constant-current diode is fabricated as a two-terminal device based on an n-channel junction field-effect transistor (JFET) die, with the gate and source internally shorted to enable current regulation without an external gate connection.[20][21] Construction begins with a p-type silicon substrate, upon which an n-type epitaxial layer forms the conductive channel; p-type dopants are then diffused to create the gate junctions on either side of the channel.[20] Metallization is applied to form ohmic contacts to the drain, source, and gate regions, with the gate-source shorting achieved through direct interconnection via this metallization layer, effectively biasing the JFET for constant-current operation.[20] This shorting mechanism, as utilized in the JFET basis, ensures the device functions as a passive current limiter.[20] The completed JFET die is encapsulated in a compact, diode-like package to facilitate two-terminal use, commonly the DO-35 glass axial-leaded style for its hermetic sealing and thermal properties, though other axial configurations are also employed.[21] Silicon serves as the primary material for these standard devices, providing reliable performance in typical low-voltage applications.[21] Available current ratings for standard constructions span from approximately 0.5 mA to 20 mA, allowing selection based on circuit requirements, with examples including the 1N5283 series offering regulator currents around 0.22 mA to 4.7 mA in DO-35 packages.[21][11]Alternative constructions
Alternative constant-current diodes use self-biased transistor (SBT) technology, typically implemented with bipolar junction transistors (BJTs) in a configuration where the base is connected to the collector via a resistor network to provide internal biasing. This setup achieves current regulation similar to JFET-based devices but features immediate turn-on at low voltages (near 0.7 V) and a negative temperature coefficient to mitigate thermal runaway, making it suitable for higher-power applications like LED drivers. SBT devices are often housed in surface-mount or axial packages and support currents from 5 mA to 90 mA.[3] Niche alternatives include diode-connected transistors, where a BJT or depletion-mode MOSFET has its base/gate tied to the collector/drain, approximating constant-current operation through the device's transconductance characteristics in integrated or discrete circuits. These are used in low-power or legacy designs but offer less precision than dedicated JFET or SBT types.[22]Electrical characteristics
I-V characteristics
The I-V characteristic of a constant-current diode, also known as a current-regulating diode, displays a distinctive profile where the drain current (I_D) rises gradually with increasing drain-source voltage (V_DS) until reaching a minimum regulating voltage (V_min, typically 1-3 V), beyond which the current stabilizes in a nearly flat region. This plateau, often extending up to 100 V or more, maintains the current at a constant value regardless of further voltage increases, providing effective current limiting. Below V_min, the current increases sharply, resembling the subthreshold behavior of its underlying JFET structure. For example, in a 1.5 mA device, the regulated current holds steady from approximately 2 V to 100 V.[6] Unidirectional constant-current diodes operate exclusively in forward bias, with negligible reverse conduction until breakdown. In contrast, bidirectional variants, such as certain AlGaN/GaN designs, exhibit symmetric I-V curves, enabling current regulation in both polarities with mirrored flat regions above the respective |V_min| thresholds.[15] The device's behavior in the regulating region can be approximated by the equation for , where represents the knee current (the nominal regulated value, e.g., 0.22 mA for the 1N5283). This simplification highlights the high dynamic impedance (often in the megohm range) that enforces current constancy.[23][24] Temperature influences the I-V curve slope through a temperature coefficient for the regulated current (typically positive for low-current devices and negative for high-current devices, with magnitudes of 0.1-2%/°C) over operating ranges from -65°C to +200°C; this effect arises from enhanced carrier mobility and reduced channel resistance in the JFET base at higher temperatures.[25][8]Key parameters
The key parameters of a constant-current diode (also known as a current-regulating diode or JFET-based current source) define its performance in maintaining a stable current output across varying voltages, enabling selection based on application requirements such as power supply range and precision needs. The nominal current, denoted as or pinch-off current , typically ranges from 0.05 mA to 25 mA, with common values between 0.2 mA and 5 mA for standard silicon devices; for example, the Vishay J500 series offers options from 0.24 mA (J500) to 4.7 mA (J511).[26] This parameter is measured at a specified voltage (often 10 V) using pulse testing at 25°C to avoid self-heating effects.[7] The minimum regulating voltage (or knee voltage ) is the lowest voltage at which the device begins to regulate current effectively, typically 1 V to 5 V; for instance, it is 0.5 V for low-current Semitec E-101 models and up to 3.7 V for higher-current E-452 variants.[7] The maximum voltage (or working peak voltage) sustains regulation without breakdown, generally up to 100 V for silicon-based devices like the Microsemi 1N52xx series.[27] Dynamic resistance in the regulating region, representing the incremental voltage change per current change (), is high (often in the megaohm range) to ensure current stability; examples include 25 MΩ for low-current Microsemi 1N5283 and 0.235 MΩ for 1N5314 at 25 V.[27] Tolerance specifications for nominal current accuracy are typically ±10% to ±20%, depending on the variant and testing conditions; for example, Vishay J500 series devices have a ±20% tolerance on .[26] Temperature coefficient (tempco), indicating current variation with temperature, has magnitudes ranging from 0.5% to 2% per °C and can be positive or negative (e.g., -0.34%/°C for higher-current J511 and up to +2.1%/°C for low-current Semitec E-101), measured over 25–50°C or 0–100°C ranges.[7][26] Testing methods for these parameters involve a simple series resistor circuit to apply a controlled voltage while measuring current compliance, often using pulse waveforms (e.g., 90 Hz RMS signal at 10% of operating voltage) to assess regulation and impedance without thermal drift; reliability is verified through accelerated tests like dry heat (150°C for 1000 hours) or temperature cycling.[7][27] Datasheet interpretation varies by manufacturer and variant: Semitec E-series emphasizes pinch-off current at 10 V with min/max ranges for tolerance, while Microsemi 1N52xx and Vishay J500 focus on regulator current at knee voltage, dynamic impedance , and graphical tempco data for precise selection in low- or high-current applications.[7][26] The I-V characteristics, detailed elsewhere, inform these specs by showing the regulating region's flatness.[27]| Parameter | Symbol | Typical Range | Example Values | Measurement Condition |
|---|---|---|---|---|
| Nominal Current | or | 0.05–25 mA | 0.24 mA (J500), 4.7 mA (J511) | Pulse at 10 V, 25°C[26] |
| Minimum Regulating Voltage | or | 1–5 V | 0.5 V (E-101), 2.1 V (J511) | At 0.8 [7] |
| Maximum Voltage | Up to 100 V (Si) | 100 V (1N52xx), 50 V (J500) | Peak operating without breakdown[27] | |
| Dynamic Resistance | 0.2–25 MΩ | 25 MΩ (1N5283), 0.3 MΩ (J511) | At 25 V in regulation[26] | |
| Current Tolerance | - | ±10–20% | ±20% (J500 series) | On [26] |
| Temperature Coefficient | Tempco | ±0.5–2%/°C | -0.34%/°C (J511), +2.1%/°C (E-101) | Over 0–100°C or 25–50°C[7] |