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GDDR3 SDRAM
GDDR3 SDRAM
GDDR3 SDRAM
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GDDR3 SDRAM
Graphics Double Data Rate 3 Synchronous Dynamic Random-Access Memory
Type of RAM
GDDR3 chips on a AMD Radeon HD 4670
DeveloperJEDEC
TypeSynchronous dynamic random-access memory
Generation3rd generation
PredecessorGDDR2 SDRAM
SuccessorGDDR4 SDRAM
A Samsung GDDR3 256MBit package
Inside a Samsung GDDR3 256MBit package

GDDR3 SDRAM (Graphics Double Data Rate 3 SDRAM) is a type of DDR SDRAM specialized for graphics processing units (GPUs) offering less access latency and greater device bandwidths compared to DDR2 SDRAM of the same generation. Its specification was developed by ATI Technologies in collaboration with DRAM vendors including Elpida Memory, Hynix Semiconductor, Infineon (later Qimonda) and Micron.[1] It was later adopted as a JEDEC standard.

Overview

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It has much the same technological base as DDR2, but the power and heat dispersal requirements have been reduced somewhat, allowing for higher performance memory modules, and simplified cooling systems. GDDR3 is not related to the JEDEC DDR3 specification. This memory uses internal terminators, enabling it to better handle certain graphics demands. To improve throughput, GDDR3 memory transfers 4 bits of data per pin in 2 clock cycles.

The GDDR3 interface transfers two 32 bit wide data words per clock cycle from the I/O pins. Corresponding to the 4n-prefetch a single write or read access consists of a 128 bit wide, one-clock-cycle data transfer at the internal memory core and four corresponding 32 bit wide, one-half-clock-cycle data transfers at the I/O Pins. Single-ended unidirectional Read and Write Data strobes are transmitted simultaneously with Read and Write data respectively in order to capture data properly at the receivers of both the Graphics SDRAM and the controller. Data strobes are organized per byte of the 32 bit wide interface.

Commercial implementation

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Despite being designed by ATI, the first card to use the technology was nVidia's GeForce FX 5700 Ultra in early 2004, where it replaced the GDDR2 chips used up to that time. The next card to use GDDR3 was nVidia's GeForce 6800 Ultra, where it was key in maintaining reasonable power requirements compared to the card's predecessor, the GeForce 5950 Ultra. ATI began using the memory on its Radeon X800 cards. GDDR3 was Sony's choice for the PlayStation 3 gaming console's graphics memory, although its nVidia based GPU is also capable of accessing the main system memory, which consists of XDR DRAM designed by Rambus Incorporated (Similar technology is marketed by nVidia as TurboCache in PC platform GPUs). Microsoft's Xbox 360 has 512 MB of GDDR3 memory. Nintendo's Wii also contains 64 MB of GDDR3 memory.

Advantages of GDDR3 over DDR2

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  • GDDR3's strobe signal, unlike DDR2 SDRAM, is unidirectional & single-ended (RDQS, WDQS). This means there is a separate read and write data strobe allowing for a quicker read to write ratio than DDR2.
  • GDDR3 has a hardware reset capability allowing it to flush all data from memory and then start again.
  • Lower voltage requirements leads to lower power requirements, and lower heat output.
  • Higher clock frequencies, due to lower heat output, this is beneficial for increased throughput and more precise timings.

See also

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References

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[edit]
Revisions and contributorsEdit on WikipediaRead on Wikipedia

GDDR3 SDRAM

View on Grokipedia
from Grokipedia
GDDR3 SDRAM (Graphics Double Data Rate 3 Synchronous Dynamic Random-Access Memory) is a high-performance memory technology optimized for graphics processing units (GPUs), featuring a 4n prefetch architecture that enables data rates of up to 2 Gbps per pin and clock frequencies reaching 1 GHz, making it ideal for bandwidth-intensive tasks like 3D rendering and video processing. The specification for GDDR3 was completed in 2002 by ATI Technologies in partnership with DRAM manufacturers including Samsung, Hynix, and Infineon, as an evolution from GDDR2 to deliver faster memory clocks starting at 500 MHz with potential up to 800 MHz for enhanced graphics performance. It achieved mainstream adoption in the mid-2000s, powering key hardware such as NVIDIA GeForce GPUs, AMD Radeon cards, and gaming consoles including the PlayStation 3 and Xbox 360. GDDR3 operates at a nominal voltage of 1.8 V (with variants up to 1.9 V), supporting organizations like 512 Mbit in a 2M × 32 × 8-bank configuration and programmable burst lengths of 4 or 8. Notable features include on-die termination (ODT) on data, command, and address lines to minimize signal reflections in high-speed environments, ZQ calibration for dynamic adjustment of during operation, and a for precise output timing. These elements, combined with CAS latencies ranging from 7 to 13, allow for efficient handling of graphics workloads while maintaining power consumption around 440–550 mA under active conditions. As a graphics-specific variant of DDR technology, GDDR3 emphasizes high bandwidth over the capacity and low-power focus of standard DDR3 SDRAM, incorporating optimizations like internal terminators and higher voltage tolerance to support the parallel data transfers demanded by GPUs, though it requires more robust cooling due to elevated thermal output. By the late , it had been largely superseded by GDDR4 and GDDR5 for even greater speeds, but GDDR3 remains notable for enabling the graphics boom of its era.

Introduction

Definition and Purpose

GDDR3 SDRAM, or Graphics Double Data Rate 3 Synchronous Dynamic Random-Access Memory, is a specialized variant of engineered specifically for graphics processing units (GPUs). It emphasizes high bandwidth and reduced access latency to efficiently manage the demanding flows inherent in visual rendering tasks, distinguishing it from general-purpose DDR SDRAM used in system memory. The "G" prefix highlights its graphics-oriented design, which prioritizes rapid parallel transfers over the sequential access patterns typical of workloads. The primary purpose of GDDR3 SDRAM is to support the intensive parallel processing required in graphics applications, such as , vertex shading, and frame buffer operations. These workloads involve simultaneous access to vast datasets for real-time synthesis, where high throughput is essential to achieve smooth in gaming, , and . By optimizing for GPU architectures, GDDR3 enables more effective handling of and vertex data streams, reducing bottlenecks that could degrade visual quality or frame rates, unlike standard which focuses on broad compatibility for CPU-centric tasks. This graphics-specific evolution stems from collaborative efforts by industry leaders like and memory manufacturers, who tailored GDDR3 to meet the escalating demands of immersive virtual environments and high-fidelity graphics. Its architecture facilitates greater device bandwidth, making it ideal for accelerating the rendering of complex scenes without the overhead of general-purpose constraints.

Key Characteristics

GDDR3 SDRAM employs a 4n-prefetch architecture, which enables the transfer of four bits of data per pin over two clock cycles during burst operations, facilitating efficient sequential data access optimized for workloads. This design supports programmable burst lengths of 4 or 8 words, emphasizing high-throughput burst transfers rather than low-latency patterns typical in . A key feature for is on-die termination (ODT), implemented on both data lines and command/address buses, which minimizes reflections and improves eye diagram margins in high-speed graphics interfaces. Additionally, GDDR3 includes a dedicated hardware reset pin (RESET), a VDDQ CMOS input that ensures reliable device initialization by placing outputs in a high-impedance state and disabling internal circuits during power-up, preventing undefined states. GDDR3 achieves effective data rates up to 2 Gbps per pin, translating to bandwidths of approximately 4 GB/s for 16-bit wide chips and 8 GB/s for 32-bit wide configurations, prioritizing overall system throughput in bandwidth-intensive applications. Operating at a core voltage of 1.8 V ± 0.1 V, it consumes about half the power of preceding GDDR2 memory (at 2.5 V), resulting in reduced heat generation suitable for densely packed graphics cards.

History and Development

Origins and Standardization

The development of GDDR3 SDRAM was led by , which announced the specification in October 2002 in collaboration with major DRAM manufacturers including Elpida Memory, Hynix Semiconductor, , and . This partnership aimed to create a memory type optimized for processing, building on the foundations of prior DDR technologies while addressing specific needs of high-performance graphics cards. The effort was completed over the summer of 2002, with initial chips targeted for availability in mid-2003. ATI's initial specification for GDDR3 was proprietary, designed to overcome the bandwidth and speed limitations of GDDR2 SDRAM, which struggled with the increasing demands of advanced graphics rendering. Key focuses included achieving higher clock speeds—starting at 500 MHz and potentially reaching up to 800 MHz—to enable faster data transfer rates for graphics workloads, while also reducing power consumption compared to predecessors to support denser memory configurations up to 128 MB on graphics cards. This approach leveraged elements from JEDEC's ongoing DDR-II work but tailored them for point-to-point graphics interfaces, marking one of the first instances of a market-specific DRAM specification preceding broader industry adoption. The GDDR3 specification was subsequently adopted as a formal standard in May 2005 under section 3.11.5.7 of JESD21-C, which defined GDDR3-specific functions for synchronous RAM (SGRAM). This standardization process ensured compatibility across manufacturers, facilitating widespread production and integration into hardware, as the collaborative foundation established by ATI and its partners enabled seamless transition from to open implementation.

Timeline of Introduction

The development of GDDR3 SDRAM, initially led by in collaboration with memory manufacturers, culminated in its market debut through 's implementation, despite ATI's foundational role in the specification. In early 2004, introduced the FX 5700 Ultra , which featured the first commercial use of GDDR3 memory, offering improved bandwidth over prior GDDR2 implementations in select configurations. By mid-2004, ATI accelerated GDDR3's adoption with the launch of its on May 4, fully integrating the memory type to enhance performance in high-end GPUs and establishing it as a standard for graphics applications. From 2005 to 2006, GDDR3 saw widespread integration across major GPU lines, including NVIDIA's 6 and 7 series—such as the GeForce 6800 GT released in June 2004 with 256 MB GDDR3—and ATI's , launched on October 5, 2005, which further solidified its prevalence in consumer and professional graphics cards. The emergence of GDDR4 in 2006, first appearing in ATI's Radeon X1950 series in August, began signaling an initial shift, though GDDR3 remained dominant. Production of GDDR3 tapered off in the late as GDDR5 gained dominance starting in 2008 with AMD's and NVIDIA's , with manufacturing largely ceasing around 2010 to prioritize higher-performance successors.

Technical Specifications

Electrical and Timing Parameters

GDDR3 SDRAM operates with a supply voltage of 1.8 V ±0.1 V or 1.9 V ±0.1 V for both the core (VDD) and I/O interface (VDDQ), depending on the speed grade, to ensure stable performance under varying thermal and electrical conditions. This voltage level represents a reduction from prior generations, contributing to lower overall power dissipation while supporting high-speed graphics workloads. The memory achieves effective data rates from 1.4 GT/s to 2.0 GT/s per pin, driven by clock frequencies ranging from 700 MHz to 1.0 GHz, with the internal clock running at half the data rate to enable transfers on both clock edges. At the upper limit, this corresponds to a minimum clock cycle time (tCK) of 1.0 ns, providing access times suitable for demanding rendering applications. Timing parameters are optimized for graphics throughput, with the row-to-column delay (tRCD) varying by speed grade and operation type to minimize latency in burst accesses. The CAS latency (CL) is programmable across multiple clock cycles to allow flexibility in system design. Representative values for a high-speed variant are summarized below:
ParameterSymbolValue (High-Speed Grade)UnitNotes
Clock Cycle TimetCK1.0nsMinimum for 2.0 GT/s
Row-to-Column Delay (Read)tRCD14nsFor 2.0 GT/s grade
Row-to-Column Delay (Write)tRCD10nsFor 2.0 GT/s grade
CAS LatencyCL7–13cyclesProgrammable
Power consumption peaks at 440 mA per 512 Mbit chip during active one-bank operation at 1.8 V (1.6 GT/s grade) or 550 mA at 1.9 V (2.0 GT/s grade), equating to roughly 0.8–1 per chip and scaling to up to 10 for a 512 MB module with eight chips under full load. Efficiency is further improved through low-power idle modes, such as self-refresh, which limits current to 20 mA per chip, enabling reduced energy use during non-active periods.

Capacity and Organization

GDDR3 SDRAM chips were produced in per-die densities of 128 Mb, 256 Mb, 512 Mb, and 1 Gb, enabling total module capacities up to 1 GB through the integration of multiple dies in cards. These densities supported scalable configurations for high-bandwidth applications, with lower-density chips used in early implementations and higher densities adopted as fabrication processes advanced. The internal organization of GDDR3 chips typically features x16 or x32 data output configurations, with an effective internal data path width of up to 128 bits to facilitate efficient prefetch operations. Devices include 4 or 8 banks, with lower-density (128 Mb, 256 Mb) using 4 banks and higher-density (512 Mb, 1 Gb) using 8 banks, allowing concurrent access to different memory regions for improved parallelism and reduced latency in patterns. For instance, a 512 Mb x32 chip is organized as 8 banks of 2 Mwords × 32 bits each. Row and column in GDDR3 follows a hierarchical tailored to , with 12 to 13 row bits and 9 to 10 column bits. This supports page (row) sizes of 1 KB to 2 KB, balancing and access efficiency; a representative 256 Mb x32 device uses 4 banks with 12 row bits and 9 column bits for 2 KB pages, while a 1 Gb x16 device employs 8 banks, 13 row bits, and 10 column bits for 2 KB pages. GDDR3 chips are housed in fine-pitch ball grid array (FBGA) packages optimized for high-density GPU integration, including 136-ball FBGA for x32 variants and 96-ball FBGA for x16 variants. These compact packages, typically measuring 10 mm × 12.5 mm or similar, enable dense stacking and direct attachment to graphics processors.

Architecture

Internal Structure

The internal structure of a GDDR3 SDRAM chip centers on its core components designed to handle high-speed data access for graphics applications. At the heart is the 4n-prefetch buffer, which fetches 4n bits (where n typically equals the device's I/O width, such as 16 for x16 configurations or 32 for x32) from the memory array in a single internal access. This prefetch mechanism enables burst transfers by pre-loading data ahead of time, allowing the chip to output two 32-bit words per clock cycle on the interface during read or write operations, thereby supporting efficient pipelining without stalling the external bus. The memory array comprises dynamic RAM (DRAM) cells arranged in multiple independent banks—typically eight banks per chip—each with dedicated sense amplifiers that detect and amplify small voltage differences from the cells during row activation. These sense amplifiers also serve to restore the data back to the cells after reading, preventing charge leakage. To maintain against inherent DRAM volatility, the array requires periodic refresh cycles, performed every 64 ms across all rows, which involve activating and precharging rows to recharge the capacitors without external intervention during normal operation. Control logic within the chip manages operational parameters through programmable mode registers, set via mode register set () commands at initialization or during operation. Key configurations include CAS (column address strobe) latency, which defines the delay in clock cycles between a read command and data output (programmable from 7 to 13 cycles); burst length, selectable as 4 or 8 words to balance throughput and latency; and on-die termination (ODT) settings, which adjust internal termination resistance (e.g., ZQ/4 or ZQ/2) to minimize signal reflections in high-speed environments. These registers ensure the chip adapts to system requirements while maintaining . The burst bandwidth of GDDR3, which quantifies the maximum transfer rate enabled by its internal structure, is derived from the interplay of prefetch, interface timing, and bus configuration. Start with the clock ff (in MHz), which drives the interface; since GDDR3 operates on a (DDR) basis, it achieves 2f2f transfers per second (MT/s). Multiply by the bus width ww (in bits, e.g., 32 or 64 per chip or module) to get bits per second: 2f×w2f \times w. The 4n-prefetch factor p=4p = 4 effectively multiplies the internal fetch rate to match this interface speed, allowing the core (running at roughly f/4f/4) to supply without bottlenecks—thus incorporating pp scales the effective throughput relative to core speed, but in standard calculation, it's embedded in the DDR multiplier for interface bandwidth. Convert to bytes by dividing by 8: (2f×w)/8(2f \times w) / 8 GB/s (simplifying as prefetch aligns internal and external rates). For example, with f=1000f = 1000 MHz and w=64w = 64 bits, bandwidth = (2×1000×64)/8=16(2 \times 1000 \times 64) / 8 = 16 GB/s, demonstrating the structure's role in achieving graphics-oriented . Bandwidth=2×f×w8(in GB/s)\text{Bandwidth} = \frac{2 \times f \times w}{8} \quad (\text{in GB/s}) Here, ff is the clock frequency (MHz), ww is the bus width (bits), and the prefetch enables the full DDR rate without core overload; this formula calculates the interface bandwidth.

Interface and Signaling

GDDR3 SDRAM utilizes a point-to-point bus interface with a differential clock consisting of CK and CK# signals to enable synchronous operations at high frequencies. The clock inputs are differential to minimize noise and skew, with address, command, and control signals sampled on the rising edge of CK, while data transfers occur on both edges for double data rate performance. This setup supports data transfer rates up to 2000 Mbps per pin, depending on the specific device configuration. Data signaling in GDDR3 employs unidirectional single-ended strobes to simplify high-speed communication and reduce complexity compared to bidirectional designs. For read operations, the RDQS strobe is output from the memory device, edge-aligned with the data bits (DQ) to facilitate precise capture at the controller. Write operations use the WDQS strobe, which is input to the device and center-aligned with incoming data, ensuring accurate latching while allowing data masking via DM signals. These strobes operate per byte lane, supporting burst lengths of 4 or 8 words. The command and address bus in GDDR3 is multiplexed, combining row and column addresses on shared pins (A0-A11) along with bank selects (BA0-BA2) and control signals (RAS#, CAS#, WE#, CS#). A (DLL) is integrated to align internal clocks with the external CK/CK# for output timing accuracy, requiring initialization cycles to lock. Write leveling is supported through programmable write latency (WL) settings from 1 to 7 clocks, allowing the controller to fine-tune DQS positioning relative to the clock for optimal . On-die termination (ODT) in GDDR3 features dynamic, programmable resistors to mitigate signal reflections on the bus, particularly at speeds exceeding 1 GHz. ODT values, such as 60 Ω (ZQ/4) or 120 Ω (ZQ/2), are calibrated using an external ZQ reference pin connected to a 240 Ω resistor and can be enabled or disabled via extended mode registers (EMRS). This termination applies to DQ, DM, and WDQS pins during writes and is automatically disabled during reads after a delay of CL-1 clocks.

Performance Features

Advantages over Predecessors

GDDR3 SDRAM introduced significant improvements over GDDR2 and DDR2, enhancing power efficiency, clock speeds, and design simplicity for graphics-oriented applications. Compared to GDDR2, GDDR3 supported higher maximum clock speeds of up to 1000 MHz, more than doubling the ~500 MHz limit of GDDR2 and enabling greater performance in high-bandwidth scenarios. Relative to DDR2, GDDR3 employed unidirectional strobe signals (RDQS for reads and WDQS for writes), replacing DDR2's bidirectional differential strobes (DQS/DQS#). This change simplified controller and PCB design by eliminating the need for bidirectional drivers and reducing signal complexity, while boosting effective bandwidth by up to 50% through improved timing alignment and reduced skew in data transfers. Additionally, GDDR3 incorporated a dedicated hardware reset pin, enabling rapid initialization by flushing internal data buffers without a full power cycle, which accelerated system boot times compared to DDR2's software-only reset mechanisms. GDDR3's further amplified bandwidth advantages through an optimized 4n prefetch buffer and programmable on-die termination (ODT), which enhanced at high frequencies. These features delivered up to 2x effective throughput in short-burst graphics workloads, such as and frame buffer operations, by minimizing reflections and allowing sustained data rates exceeding 28.8 GB/s per 128-bit bus. In GPU workloads involving random reads, such as processing, GDDR3 reduced access latency by 20-30% over DDR2 equivalents, improving frame rates in bandwidth-limited rendering tasks.

Comparison with DDR3

GDDR3 employs a 4n prefetch , in which four bits are prefetched per internal clock cycle, contrasting with DDR3's 8n prefetch that doubles the burst size for improved in sequential operations. This design choice in GDDR3 facilitates higher operating frequencies, often exceeding 1 GHz, but results in reduced for long, linear transfers common in general tasks. In terms of electrical characteristics, GDDR3 operates at a nominal voltage of 1.8 V using a stub series termination (SSTL) inherited from DDR2 designs, which employs multi-drop stubs with on-die termination for in graphics-oriented point-to-multipoint configurations. DDR3, by comparison, runs at 1.5 V and adopts a fly-by with a dedicated VTT termination network at 0.75 V, enabling better skew control and scalability across multiple ranks or devices in system memory modules. Performance-wise, GDDR3 prioritizes raw bandwidth for graphics applications, achieving up to 20 GB/s per module in high-end configurations through data rates reaching 2 Gbps per pin, but this comes at the expense of elevated power draw—typically around 10 W per module versus DDR3's more efficient 5 W—due to its higher voltage and clock speeds. Unlike certain DDR3 implementations that support optional on-die (ECC) for enhanced reliability in enterprise environments, GDDR3 omits such features to focus on speed over in burst-oriented workloads. These differences underscore their distinct use cases: GDDR3 excels in handling parallel, high-bandwidth bursts for rendering and texture , while DDR3 is tailored for the low-latency, random-access patterns required by CPU caches and system multitasking. GDDR3 entered the market in the mid-2000s, predating the full commercial rollout of DDR3 in 2007.

Applications and Implementations

Use in Graphics Processing Units

GDDR3 SDRAM was first integrated into NVIDIA's 6800 Ultra graphics card in 2004, featuring 256 MB of memory clocked at 550 MHz (1.1 GHz effective) on a 256-bit bus, delivering approximately 35.2 GB/s of bandwidth to support high-resolution gaming and early shader-intensive applications. This marked a significant upgrade from prior GDDR2 implementations, enabling the card's NV40 GPU to handle complex textures and more efficiently in titles like Doom 3. NVIDIA continued expanding GDDR3 usage in the 8800 GTX, released in 2006, which utilized up to 768 MB of GDDR3 memory at 900 MHz (1.8 GHz effective) across a 384-bit interface, achieving around 86.4 GB/s bandwidth for 10-era workloads involving unified shaders and advanced . ATI, later acquired by , adopted GDDR3 in its X850 XT in 2004, equipping the card with 256 MB of memory at 540 MHz (1.08 GHz effective) on a 256-bit bus to power the R480 GPU for improved pixel fill rates in games such as Half-Life 2. By 2006, the X1950 XT incorporated 512 MB of GDDR3 running at 700 MHz (1.4 GHz effective) on a 256-bit bus, providing about 44.8 GB/s bandwidth to enhance multi-GPU scaling and support higher demands in rendering pipelines. (Note: The higher-end X1950 XTX variant used GDDR4 memory.) These implementations allowed ATI/ GPUs to compete effectively in bandwidth-intensive scenarios like and multi-sample . In professional graphics, NVIDIA's series leveraged GDDR3 for workstation applications, as seen in the Quadro FX 4500 from 2005, which featured 512 MB of GDDR3 at 525 MHz (1.05 GHz effective) on a 256-bit bus, yielding 33.6 GB/s bandwidth optimized for CAD software and in tools like . This configuration supported certified drivers for precise geometry handling and large dataset visualization in fields such as and , where error-free memory access was critical. GDDR3 configurations in PC and professional GPUs typically ranged from 256 MB to 512 MB per card, with bus widths of 128 to 256 bits (and occasionally wider in later models), resulting in aggregate bandwidths of 20 to 50 GB/s to balance cost and performance for texture caching and z-buffer operations. These setups prioritized high-speed transfer over capacity in discrete cards, contrasting with more constrained designs in gaming consoles.

Adoption in Gaming Consoles

GDDR3 SDRAM played a pivotal role in the seventh-generation gaming consoles released in the mid-2000s, providing the high-bandwidth memory necessary for advancing graphical capabilities beyond the previous era's standards. These systems, including the Microsoft Xbox 360, Sony PlayStation 3, and Nintendo Wii, integrated GDDR3 to support more complex rendering and higher resolutions, marking a shift toward high-definition (HD) gaming experiences. The Microsoft Xbox 360, launched in 2005, featured a total of 512 MB of shared GDDR3 RAM clocked at 700 MHz, delivering 22.4 GB/s of bandwidth accessible by both its ATI Xenos GPU and Xenon CPU in a unified . This configuration, supplemented by 10 MB of on the GPU, allowed the console to handle advanced shaders and effects without the bottlenecks seen in prior architectures. In the Sony PlayStation 3, released in 2006, 256 MB of GDDR3 memory operated at 650 MHz (1.3 GHz effective) to support the NVIDIA RSX GPU, providing approximately 20.8 GB/s of dedicated graphics bandwidth in a partially unified architecture shared with the system's Cell processor. This setup facilitated flexible allocation between CPU and GPU tasks for optimized performance in resource-intensive titles. The Nintendo Wii, also launched in 2006, employed 64 MB of GDDR3 memory clocked at approximately 243 MHz (0.486 GHz effective) for shared use by its ATI Hollywood GPU and Broadway CPU, supplemented by 24 MB of for fast system access. This allocation, with about 3.9 GB/s bandwidth on a 64-bit bus, prioritized the Wii's motion-control focus over raw graphical power, allowing the Hollywood chip to render scenes at while maintaining low power consumption. The adoption of GDDR3 in these consoles significantly enabled HD graphics, with the and supporting resolutions up to and , which transformed visual fidelity in gaming by allowing richer textures, lighting, and particle effects compared to the standard-definition limitations of sixth-generation systems.

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